Uncooled InAsSb photoconductors were fabricated. The photoconductors were based on InAs_0.09Sb_0.91and InAs_0.09Sb_0.91thick epilayers grown on InAs substrates by melt epitaxy (ME). Ge immersion lenses were set on the photoconductors. The cutoff wavelength of InAs_0.09Sb_0.91detectors is obviously extended to 11.5 μm, and that of InAs_0.09Sb_0.95detectors is 8.3 μm. At room temperature, the peak detectivity of D_λp^* at wavelength of 6.8 μm and modulation frequency of 1 200 Hz is 1.08×10⁹cm·Hz^1/2·W^-1 for InAs_0.09Sb_0.91photoconductors, the detectivity D^* at wavelength of 9 μm is 7.56×10⁸cm·Hz^1/2·W^-1, and that at 11 μm is 3.92×10⁸cm·Hz^1/2·W^-1. The detectivity of InAs_0.09Sb_0.91detectors at the wavelengths longer than 9 μm is about one order of magnitude higher than that of InAs_0.09Sb_0.95detectors, which rises from the increase of arsenic (As) composition in InAs_0.09Sb_0.91materials.

A new wavelength beam combining technique for a high-power laser diode bar by using a temperature gradient heat sink has been proposed. The thermal controlling principle of the temperature heat sink has been discussed. It has been proved by experiment that the linear temperature distribution, which generates linear wavelength spread of the output beams from a LD bar, can be obtained by introducing a temperature gradient heat sink and the output beams can be focused into a relative small spot by using the Czerny-Turner beam shaping system.